Model for computing kinetics of the graphene edge epitaxial growth on copper.
نویسنده
چکیده
A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island's edge advancement on Cu[111] and Cu[100] surfaces is computed as a function of the growth temperature and pressure. Spatially resolved concentration profiles of the atoms and dimers are determined, and the contributions provided by these species to the growth speed are discussed. Island growth under the conditions of a thermal cycling is studied.
منابع مشابه
Insights into the kinetics of a graphene edge epitaxial growth on copper from a one-dimensional PDE model
A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island’s edge advancement on Cu[111] and Cu[100] surfaces is computed as a function of the growth temperature and pressure. Spatially resolved concentration profiles of the atoms and dimers are determined, and...
متن کاملSynthesis and Characterization of Graphene Oxide Nano-Sheets for Effective Removal of Copper Phthalocyanine from Aqueous Media
Graphene Oxide (GO) nano sheets was synthesized from graphite by Hummers method. The nature and morphology of the GO were characterized using FT-IR, UV-Vis, SEM and XRD analysis. Batch sorption experiments were carried out to remove copper (ii) phthalocyanine-tetrasulfonic acid tetrasodium salt [Cu(tsPc)-4.4Na+] from its aqueous solutions using GO as an adsorbent. Experime...
متن کاملThe role of surface oxygen in the growth of large single-crystal graphene on copper.
The growth of high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved control over domain size and morphology, and the results vary from lab to lab under presumably similar growth conditions. We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control ...
متن کاملThe physics of epitaxial graphene on SiC(0001).
Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole,...
متن کاملNovel growth mechanism of epitaxial graphene on metals.
Graphene, a hexagonal sheet of sp(2)-bonded carbon atoms, has extraordinary properties which hold immense promise for nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challenges, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review. E
دوره 93 6 شماره
صفحات -
تاریخ انتشار 2016